Yidir ANDROUSSI

Maître de Conférences Université de Lille

Bâtiment C6 - 2è Etage - Bureau 201
Unité Matériaux et Transformations
Cité scientifique, Bât. C6
Université de Lille
59655 Villeneuve d'Ascq
France
Tel: +33 (0) 320 43 49 90
Fax: +33 (0) 320 43 65 91
Courriel : Envoyer un mel à Yidir ANDROUSSI
Identifiant ORCID :

Recherche

Etude par microscopie électronique en transmission des nanostructures semiconductrices

Derniers dépôts dans dans LillOA (Lille Open Archive)

Publications

4. A. Stolz, E. Cho, E.-H. Dogheche, Y. Androussi, d. Troadec, D. Pavlidis, D. Decoster, Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy, Applied Physics Letters 98, 161903 (2011), [doi: 10.1063/1.3582055, LillOA]
3. A. Gokarna, A. Gauthier-Brun, W. Liu, Y. Androussi, E. Dumont, E.-H. Dogheche, J.H. Teng, S.J. Chua, D. Decoster, Optical and microstructural properties versus indium content in In(x)Ga(1-x) films grown by metal organic chemical vapor deposition, Applied Physics Letters 96, 191909 (2010), [doi: 10.1063/1.3425761, LillOA]
2. X. Wallart, C. Coinon, S. Plissard, S. Godey, O. Offranc, Y. Androussi, V. Magnin, J.-F. Lampin, Picosecond Carrier Lifetime in Low-Temperature-Grown GaAsSb, Applied Physics Express 3, 111202 (2010), [doi: 10.1143/APEX.3.111202, LillOA]
1. S. Plissard, C. Coinon, Y. Androussi, X. Wallart, Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer, Journal of Applied Physics 107, 16102 (2010), [doi: 10.1063/1.3275872, LillOA]